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Compact modeling of low frequency noise and thermal noise in junction field effect transistors

Makris Nikolaos, Chevas Loukas, Bucher Matthias

Πλήρης Εγγραφή


URI: http://purl.tuc.gr/dl/dias/15E40951-8CD8-4825-9637-7B98DEF113C4
Έτος 2019
Τύπος Πλήρης Δημοσίευση σε Συνέδριο
Άδεια Χρήσης
Λεπτομέρειες
Βιβλιογραφική Αναφορά N. Makris, L. Chevas and M. Bucher, "Compact modeling of low frequency noise and thermal noise in junction field effect transistors," in 49th European Solid-State Device Research Conference, 2019, pp. 198-201. doi: 10.1109/ESSDERC.2019.8901775 https://doi.org/10.1109/ESSDERC.2019.8901775
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Περίληψη

This paper presents a novel charge-based approach to modeling bias-dependent noise in junction field-effect transistors (JFETs). Low frequency noise as well as thermal noise aspects are modeled within the recent charge-based model of the double-gate (DG) JFET. For low frequency noise, mobility fluctuations according to the Hooge model is addressed. Thermal noise is expressed within the charge-based modeling approach. The models are validated with respect to TCAD simulations and show correct dependence over a range of gate and drain bias. A custom setup for low frequency noise measurement of JFETs is described. Noise measurements of n-JFETs are discussed, and the compact model is compared with the measurement.

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