Free carrier mobility, series resistance, and threshold voltage extraction in junction FETsFree carrier mobility, series resistance, and threshold voltage extraction in junction FETs Peer-Reviewed Journal Publication Δημοσίευση σε Περιοδικό με Κριτές 2021-04-092020enIn this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method for MOSFETs, is developed. The same method is then extended to cover also the case when series resistance is present, while series resistance itself may be determined from the measurement from two FETs with different channel lengths. The key technological and design parameter is the threshold voltage, which may be unambiguously determined from the transconductance-to-current ratio with a constant-current method. The new methods are shown to be effective over a wide range of technical parameters, using technology computer-aided design simulations.http://creativecommons.org/licenses/by/4.0/IEEE Transactions on Electron Devices67114658-4661 Makris Nikolaos Μακρης Νικολαος Bucher Matthias Bucher Matthias Chevas Loukas Χεβας Λουκας Jazaeri Farzan Sallese Jean-Michel Institute of Electrical and Electronics Engineers Compact modeling Depletion Field-effect transistor (FET) Junction FET (JFET) Junctionless FET Mobility Series resistance Threshold voltage