Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing doseForward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose Πλήρης Δημοσίευση σε Συνέδριο Conference Full Paper 2020-06-052019enFrond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.http://creativecommons.org/licenses/by/4.0/26th International Conference "Mixed Design of Integrated Circuits and Systems"Proceedings of the 26th International Conference "Mixed Design of Integrated Circuits and Systems" Nikolaou Aristeidis Νικολαου Αριστειδης Chevas Loukas Χεβας Λουκας Papadopoulou Alexia Παπαδοπουλου Αλεξια Makris Nikolaos Μακρης Νικολαος Bucher Matthias Bucher Matthias Borghello Giulio Faccio Federico Institute of Electrical and Electronics Engineers Enclosed layout High energy physics High-Luminosity Large Hadron Collider MOSFETs Radiation hardness Total ionizing dose