Compact modeling of low frequency noise and thermal noise in junction field effect transistorsCompact modeling of low frequency noise and thermal noise in junction field effect transistors Πλήρης Δημοσίευση σε Συνέδριο Conference Full Paper 2020-04-232019enThis paper presents a novel charge-based approach to modeling bias-dependent noise in junction field-effect transistors (JFETs). Low frequency noise as well as thermal noise aspects are modeled within the recent charge-based model of the double-gate (DG) JFET. For low frequency noise, mobility fluctuations according to the Hooge model is addressed. Thermal noise is expressed within the charge-based modeling approach. The models are validated with respect to TCAD simulations and show correct dependence over a range of gate and drain bias. A custom setup for low frequency noise measurement of JFETs is described. Noise measurements of n-JFETs are discussed, and the compact model is compared with the measurement.http://creativecommons.org/licenses/by/4.0/198-20149th European Solid-State Device Research Conference Makris Nikolaos Μακρης Νικολαος Chevas Loukas Χεβας Λουκας Bucher Matthias Bucher Matthias Institute of Electrical and Electronics Engineers Compact model JFET Junction field effect transistor Low frequency noise Semiconductor device measurement Thermal noise