Charge-based model for junction FETsCharge-based model for junction FETs Peer-Reviewed Journal Publication Δημοσίευση σε Περιοδικό με Κριτές 2019-09-022018enWe present a unified charge-based model for double-gate and cylindrical architectures of junction field-effect transistors (JFETs). The central concept is to consider the JFET as a junctionless FET (JLFET) with an infinitely thin insulating layer, leading to analytical expressions between charge densities, current, and voltages without any fitting parameters. Assessment of the model with numerical technology computer-aided design simulations confirms that holding the JFET as a special case of the JLFET is justified in all the regions of operation, i.e., from deep depletion to flat-band and from linear to saturation.http://creativecommons.org/licenses/by/4.0/IEEE Transactions on Electron Devices6572694-2698Jazaeri_et_al_IEEE_Trans. Electron Devices_65(7)_2018.pdfChania [Greece]Library of TUC2019-08-30application/pdf2.1 MBfree Jazaeri, Farzan 1984- Makris Nikolaos Μακρης Νικολαος Saeidi, Ali, 1973- Bucher Matthias Bucher Matthias Sallese, Jean-Michel 1964- Institute of Electrical and Electronics Engineers Cylindrical gate all around junction field-effect transistor (JFET) Double-gate FETs Nanowire FETs Power semiconductor FETs Radiation-hard electronics Vertical JFET (V-JFET)