Charge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitancesCharge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitances Peer-Reviewed Journal Publication Δημοσίευση σε Περιοδικό με Κριτές 2019-09-022018enA compact model for the dynamic operation of double-gate junction field-effect transistors is established in this paper. Analytical model expressions are developed for the total node charges and transcapacitances valid from subthreshold to above threshold and from linear to saturation operation. The model is shown to conserve symmetry among source and drain, and circumvents problems at zero drain-to-source bias.http://creativecommons.org/licenses/by/4.0/IEEE Transactions on Electron Devices6572751-2756 Makris Nikolaos Μακρης Νικολαος Jazaeri, Farzan 1984- Sallese, Jean-Michel 1964- Bucher Matthias Bucher Matthias Institute of Electrical and Electronics Engineers Analytical model Circuit simulation Dynamic model High frequency Junction field-effect transistor (JFET) Transcapacitance