Modelling of 4H-SiC VJFETS with self-aligned contactsModelling of 4H-SiC VJFETS with self-aligned contacts Πλήρης Δημοσίευση σε Συνέδριο Conference Full Paper 2018-11-162016enPurely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtained on a series of fabricated self-aligned devices with two different channel lengths (0.3 and 1.1μm) and various channel widths (1.5, 2, 2.5, 3, 4 and 5 μm). For all the considered models I-V and C-V characteristics could be satisfactorily simulated.http://creativecommons.org/licenses/by/4.0/913-91616th International Conference on Silicon Carbide and Related MaterialsMaterials Science Forum Zekentes, Konstantinos Vassilevski Konstantin V. Stavrinidis Antonis Konstantinidis Georgios Κωνσταντινιδης Γεωργιος Kayambaki Maria Vamvoukakis Konstantinos Βαμβουκακης Κωνσταντινος Vassakis Emmanouil Peyré Hervé Makris Nikolaos Μακρης Νικολαος Bucher Matthias Bucher Matthias Schmid Patrick Stefanakis Dionyssios Tassis, Dimitrios Trans Tech Publications Compact model JFET TCAD Transistor