Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETsVariability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs Πλήρης Δημοσίευση σε Συνέδριο Conference Full Paper 2018-05-082017enVariability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, with particular emphasis on weak inversion region. Enclosed gate transistors show an improved gate voltage mismatch in weak inversion. A compact MOSFET model for LFN and its variability, based on number fluctuation theory, is shown to cover well the behavior of either type of transistors. Lower levels of noise as well as lower variability of noise are observed in enclosed gate transistors. http://creativecommons.org/licenses/by/4.0/International Conference on Microelectronic Test Structures Bucher Matthias Bucher Matthias Nikolaou Aristeidis Νικολαου Αριστειδης Mavredakis Nikolaos Μαυρεδακης Νικολαος Makris Nikolaos Μακρης Νικολαος Coustans Mathieu Lolivier, Jérôme 1978- Habaš Predrag Acović, Alexandre Meyer René Institute of Electrical and Electronics Engineers LFN Low Frequency Noise RTN Random Telegraph Noise MOSFET