Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistorsStatistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors Πλήρης Δημοσίευση σε Συνέδριο Conference Full Paper 2018-04-252017enLow frequency noise (LFN) characteristics can limit the performance of conventional CMOS designs. In the context of this paper enclosed gate N- and P-MOS transistors will be examined regarding LFN mean value and its variability in various biasing conditions. In subthreshold region enclosed gate PMOS transistors show a significantly reduced LFN variability compared to the NMOS counterpart. Both devices present an improved noise performance. The LFN compact MOSFET model applied proved to be well suited to statistically model LFN in enclosed gate transistors.http://creativecommons.org/licenses/by/4.0/International Conference on Noise and Fluctuations2017 International Conference on Noise and Fluctuations Nikolaou Aristeidis Νικολαου Αριστειδης Mavredakis Nikolaos Μαυρεδακης Νικολαος Bucher Matthias Bucher Matthias Habaš Predrag Acović, Alexandre Meyer René Institute of Electrical and Electronics Engineers Enclosed gate Low frequency noise Variability