Statistical compact modeling of low frequency noise in buried-channel, native, and standard MOSFETsStatistical compact modeling of low frequency noise in buried-channel, native, and standard MOSFETs Πλήρης Δημοσίευση σε Συνέδριο Conference Full Paper 2018-04-252017enIn this paper, Buried-Channel and Native MOSFETs are thoroughly investigated in terms of Low Frequency Noise (LFN) variability for different bias and area conditions. These devices are compared with standard bulk CMOS transistors indicating lower levels of LFN regarding both its mean value and its variability. Moreover a recently proposed compact MOSFET model for LFN and its variability, is validated with excellent results. More specifically, it covers the increase of noise deviation in weak inversion and generally its strong bias-dependence in larger devices while it also gives consistent results regarding the scaling of LFN variability.http://creativecommons.org/licenses/by/4.0/International Conference on Noise and Fluctuations2017 International Conference on Noise and Fluctuations Mavredakis Nikolaos Μαυρεδακης Νικολαος Bucher Matthias Bucher Matthias Habaš Predrag Acović, Alexandre Meyer René Institute of Electrical and Electronics Engineers Buried channel Compact model Low frequency noise MOSFET Native Variability