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Institutional Repository [SANDBOX]
Technical University of Crete
Technical University of Crete
EN
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| URI: | http://purl.tuc.gr/dl/dias/F0B5DECE-BCB4-42B0-92B1-239B1FE705DC | ||
| Year | 2023 | ||
| Type of Item | Diploma Work | ||
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| Bibliographic Citation | Dimitrios Piniaras, "Compact modeling and parameter determination for Junction FETs with temperature dependence", Diploma Work, School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece, 2023 https://doi.org/10.26233/heallink.tuc.96428 | ||
| Appears in Collections |
In the ever-evolving landscape of semiconductor technology, the n-type Junction Field Effect Transistor (JFET) plays a significant role in a variety of applications. This thesis presents a comprehensive investigation of an n-JFET, specifically focusing on the SK30A model, with a keen emphasis on its temperature-dependent behaviors. The cornerstone of this study lies in a meticulous characterization of the SK30A n-JFET under diverse temperature conditions, spanning from 25 degrees to 114 degrees Celsius. This approach enabled an in-depth exploration of the temperature-induced effects on the JFET's performance and crucial operational parameters. Specifically, we analyzed how the threshold voltage, drain current, and transconductance are influenced by the fluctuations in temperature, leading to a rich understanding of their intertwined relationships.In addition, this study conducted an examination of the operational regions of the JFET, specifically the linear and saturation regions, which are pivotal to the design and operation of analog circuits. Furthermore, the sub-threshold and threshold regions were inspected, providing insight into the JFET's transition from the off-state to the on-state, an aspect that plays a critical role in low power applications.Through this comprehensive analysis, the thesis underscores the profound impact of temperature on the JFET's performance, thereby highlighting the significance of considering temperature variations in the design and application of such devices. These findings foster a holistic understanding of the temperature-sensitive behaviors of n-JFETs, and lay the groundwork for future research and practical applications in the field of electronics.Ultimately, this thesis illuminates how the interplay of temperature and core operational parameters shapes the performance of an n-JFET, opening up new avenues for refining device efficiency and reliability in a broad range of electronic systems.
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