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Free carrier mobility, series resistance, and threshold voltage extraction in junction FETs

Makris Nikolaos, Bucher Matthias, Chevas Loukas, Jazaeri Farzan, Sallese Jean-Michel

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URIhttp://purl.tuc.gr/dl/dias/8F1E4B59-F111-4EAD-AF60-E7B3B77159FA-
Identifierhttps://doi.org/10.1109/TED.2020.3025841-
Identifierhttps://ieeexplore.ieee.org/abstract/document/9215023-
Languageen-
Extent4 pagesen
TitleFree carrier mobility, series resistance, and threshold voltage extraction in junction FETsen
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorChevas Loukasen
CreatorΧεβας Λουκαςel
CreatorJazaeri Farzanen
CreatorSallese Jean-Michelen
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryIn this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method for MOSFETs, is developed. The same method is then extended to cover also the case when series resistance is present, while series resistance itself may be determined from the measurement from two FETs with different channel lengths. The key technological and design parameter is the threshold voltage, which may be unambiguously determined from the transconductance-to-current ratio with a constant-current method. The new methods are shown to be effective over a wide range of technical parameters, using technology computer-aided design simulations.en
Type of ItemPeer-Reviewed Journal Publicationen
Type of ItemΔημοσίευση σε Περιοδικό με Κριτέςel
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2021-04-09-
Date of Publication2020-
SubjectCompact modelingen
SubjectDepletionen
SubjectField-effect transistor (FET)en
SubjectJunction FET (JFET)en
SubjectJunctionless FETen
SubjectMobilityen
SubjectSeries resistanceen
SubjectThreshold voltageen
Bibliographic CitationN. Makris, M. Bucher, L. Chevas, F. Jazaeri and J.-M. Sallese, “Free carrier mobility, series resistance, and threshold voltage extraction in junction FETs,” IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4658–4661, Nov. 2020. doi: 10.1109/TED.2020.3025841en

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