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Free carrier mobility, series resistance, and threshold voltage extraction in junction FETs

Makris Nikolaos, Bucher Matthias, Chevas Loukas, Jazaeri Farzan, Sallese Jean-Michel

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URI: http://purl.tuc.gr/dl/dias/8F1E4B59-F111-4EAD-AF60-E7B3B77159FA
Year 2020
Type of Item Peer-Reviewed Journal Publication
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Bibliographic Citation N. Makris, M. Bucher, L. Chevas, F. Jazaeri and J.-M. Sallese, “Free carrier mobility, series resistance, and threshold voltage extraction in junction FETs,” IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4658–4661, Nov. 2020. doi: 10.1109/TED.2020.3025841 https://doi.org/10.1109/TED.2020.3025841
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Summary

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method for MOSFETs, is developed. The same method is then extended to cover also the case when series resistance is present, while series resistance itself may be determined from the measurement from two FETs with different channel lengths. The key technological and design parameter is the threshold voltage, which may be unambiguously determined from the transconductance-to-current ratio with a constant-current method. The new methods are shown to be effective over a wide range of technical parameters, using technology computer-aided design simulations.

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