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Technical University of Crete
Technical University of Crete
EN
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| URI | http://purl.tuc.gr/dl/dias/576B5055-1E83-4A88-8EDD-B5F1FB6B3BA9 | - |
| Identifier | https://doi.org/10.1109/TED.2020.3019019 | - |
| Identifier | https://ieeexplore.ieee.org/document/9187566 | - |
| Language | en | - |
| Extent | 4 pages | en |
| Extent | 4,17 megabytes | en |
| Title | Generalized constant current method for determining MOSFET threshold voltage | en |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Chevas Loukas | en |
| Creator | Χεβας Λουκας | el |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Description | This work was supported in part by the Project INNOVATION-EL-Crete under Grant MIS 5002772. | el |
| Description | Αυτό το έργο χρηματοδοτήθηκε εν μέρει στα πλαίσια του Επιχειρησιακού Προγράμματος «Ανταγωνιστικότητα Επιχειρηματικότητα και Καινοτομία» Πράξη "Εθνική Υποδομή Νανοτεχνολογίας, Προηγμένων Υλικών και Μικρο-/Νανοηλεκτρονικής" - INNOVATION-EL-Crete με αριθμό MIS 5002772. | el |
| Content Summary | A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using shallow trench isolation (STI). | en |
| Type of Item | Peer-Reviewed Journal Publication | en |
| Type of Item | Δημοσίευση σε Περιοδικό με Κριτές | el |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2021-04-08 | - |
| Date of Publication | 2020 | - |
| Subject | Charge-based model | en |
| Subject | Constant current (CC) method | en |
| Subject | Edge conduction | en |
| Subject | MOSFET | en |
| Subject | Parameter extraction | en |
| Subject | Threshold voltage | en |
| Subject | Transconductance-to-current ratio | en |
| Bibliographic Citation | M. Bucher, N. Makris and L. Chevas, “Generalized constant current method for determining MOSFET threshold voltage”, IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4559–4562, Nov. 2020. doi: 10.1109/TED.2020.3019019 | en |
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