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Generalized constant current method for determining MOSFET threshold voltage

Bucher Matthias, Makris Nikolaos, Chevas Loukas

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URIhttp://purl.tuc.gr/dl/dias/576B5055-1E83-4A88-8EDD-B5F1FB6B3BA9-
Identifierhttps://doi.org/10.1109/TED.2020.3019019-
Identifierhttps://ieeexplore.ieee.org/document/9187566-
Languageen-
Extent4 pagesen
Extent4,17 megabytesen
TitleGeneralized constant current method for determining MOSFET threshold voltageen
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorChevas Loukasen
CreatorΧεβας Λουκαςel
PublisherInstitute of Electrical and Electronics Engineersen
DescriptionThis work was supported in part by the Project INNOVATION-EL-Crete under Grant MIS 5002772.el
DescriptionΑυτό το έργο χρηματοδοτήθηκε εν μέρει στα πλαίσια του Επιχειρησιακού Προγράμματος «Ανταγωνιστικότητα Επιχειρηματικότητα και Καινοτομία» Πράξη "Εθνική Υποδομή Νανοτεχνολογίας, Προηγμένων Υλικών και Μικρο-/Νανοηλεκτρονικής" - INNOVATION-EL-Crete με αριθμό MIS 5002772.el
Content SummaryA novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using shallow trench isolation (STI).en
Type of ItemPeer-Reviewed Journal Publicationen
Type of ItemΔημοσίευση σε Περιοδικό με Κριτέςel
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2021-04-08-
Date of Publication2020-
SubjectCharge-based modelen
SubjectConstant current (CC) methoden
SubjectEdge conductionen
SubjectMOSFETen
SubjectParameter extractionen
SubjectThreshold voltageen
SubjectTransconductance-to-current ratioen
Bibliographic CitationM. Bucher, N. Makris and L. Chevas, “Generalized constant current method for determining MOSFET threshold voltage”, IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4559–4562, Nov. 2020. doi: 10.1109/TED.2020.3019019en

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