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Design of micropower operational transconductance amplifiers for high total ionizing dose effects

Papadopoulou Alexia, Makris Nikolaos, Chevas Loukas, Nikolaou Aristeidis, Bucher Matthias

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URI: http://purl.tuc.gr/dl/dias/A6E0B132-D61B-47A2-AC9A-E198D4801E88
Year 2019
Type of Item Conference Full Paper
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Bibliographic Citation A. Papadopoulou, N. Makris, L. Chevas, A. Nikolaou and M. Bucher, "Design of micropower operational transconductance amplifiers for high total ionizing dose effects," in 8th International Conference on Modern Circuits and Systems Technologies, 2019. doi: 10.1109/MOCAST.2019.8742031 https://doi.org/10.1109/MOCAST.2019.8742031
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Summary

The design of radiation-hard analog/mixed signal Integrated Circuits for high Total Ionizing Dose (TID) is a challenging task. Front-end electronics for the High-Luminosity Large Hadron Collider (HL-LHC) are expected to be exposed to doses exceeding 500 Mrad(SiO2). Using a recently developed TID-Process Design Kit (PDK) in 65 nm bulk CMOS, the present paper illustrates the design of micropower, current-mirror and folded cascode CMOS Operational Transconductance Amplifiers (OTAs) using moderate inversion techniques to favor insensitivity to high TID.

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