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Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose

Nikolaou Aristeidis, Chevas Loukas, Papadopoulou Alexia, Makris Nikolaos, Bucher Matthias, Borghello Giulio, Faccio Federico

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URIhttp://purl.tuc.gr/dl/dias/031B8C04-E832-4A91-A846-FCF577B29607-
Identifierhttps://doi.org/10.23919/MIXDES.2019.8787098-
Identifierhttps://ieeexplore.ieee.org/abstract/document/8787098-
Languageen-
Extent4 pagesen
TitleForward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing doseen
CreatorNikolaou Aristeidisen
CreatorΝικολαου Αριστειδηςel
CreatorChevas Loukasen
CreatorΧεβας Λουκαςel
CreatorPapadopoulou Alexiaen
CreatorΠαπαδοπουλου Αλεξιαel
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorBorghello Giulioen
CreatorFaccio Federicoen
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryFrond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2020-06-05-
Date of Publication2019-
SubjectEnclosed layouten
SubjectHigh energy physicsen
SubjectHigh-Luminosity Large Hadron Collideren
SubjectMOSFETsen
SubjectRadiation hardnessen
SubjectTotal ionizing doseen
Bibliographic CitationA. Nikolaou, L. Chevas, A. Papadopoulou, N. Makris, M. Bucher, G. Borghello and F. Faccio, "Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose," in 26th International Conference "Mixed Design of Integrated Circuits and Systems", 2019, pp. 306-309. doi: 10.23919/MIXDES.2019.8787098en

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