Institutional Repository [SANDBOX]
Technical University of Crete
EN  |  EL

Search

Browse

My Space

Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose

Nikolaou Aristeidis, Chevas Loukas, Papadopoulou Alexia, Makris Nikolaos, Bucher Matthias, Borghello Giulio, Faccio Federico

Full record

URI: http://purl.tuc.gr/dl/dias/031B8C04-E832-4A91-A846-FCF577B29607
Year 2019
Type of Item Conference Full Paper
License
Details
Bibliographic Citation A. Nikolaou, L. Chevas, A. Papadopoulou, N. Makris, M. Bucher, G. Borghello and F. Faccio, "Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose," in 26th International Conference "Mixed Design of Integrated Circuits and Systems", 2019, pp. 306-309. doi: 10.23919/MIXDES.2019.8787098 https://doi.org/10.23919/MIXDES.2019.8787098
Appears in Collections
Conference Publications in Community School of Electrical and Computer Engineering
Conference Publications in Community Electronics Laboratory

Summary

Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.

Services

Statistics

 

Copyright © DIAS 2013