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Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose

Nikolaou Aristeidis, Chevas Loukas, Papadopoulou Alexia, Makris Nikolaos, Bucher Matthias, Borghello Giulio, Faccio Federico

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URI: http://purl.tuc.gr/dl/dias/031B8C04-E832-4A91-A846-FCF577B29607
Έτος 2019
Τύπος Πλήρης Δημοσίευση σε Συνέδριο
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Βιβλιογραφική Αναφορά A. Nikolaou, L. Chevas, A. Papadopoulou, N. Makris, M. Bucher, G. Borghello and F. Faccio, "Forward and reverse operation of enclosed-gate MOSFETs and sensitivity to high total ionizing dose," in 26th International Conference "Mixed Design of Integrated Circuits and Systems", 2019, pp. 306-309. doi: 10.23919/MIXDES.2019.8787098 https://doi.org/10.23919/MIXDES.2019.8787098
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Περίληψη

Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.

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