Institutional Repository [SANDBOX]
Technical University of Crete
EN  |  EL

Search

Browse

My Space

Extending a 65nm CMOS process design kit for high total ionizing dose effects

Nikolaou Aristeidis, Bucher Matthias, Makris Nikolaos, Papadopoulou Alexia, Chevas Loukas, Borghello Giulio, Koch Henri D., Kloukinas Kostas C., Poikela Tuomas S., Faccio Federico

Simple record


URIhttp://purl.tuc.gr/dl/dias/8828F177-C4C1-4FE2-8C51-0ED4BB2D6D06-
Identifierhttps://doi.org/10.1109/MOCAST.2018.8376561-
Identifierhttps://ieeexplore.ieee.org/document/8376561-
Languageen-
Extent5 pagesen
TitleExtending a 65nm CMOS process design kit for high total ionizing dose effectsen
CreatorNikolaou Aristeidisen
CreatorΝικολαου Αριστειδηςel
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorPapadopoulou Alexiaen
CreatorΠαπαδοπουλου Αλεξιαel
CreatorChevas Loukasen
CreatorΧεβας Λουκαςel
CreatorBorghello Giulioen
CreatorKoch Henri D.en
CreatorKloukinas Kostas C.en
CreatorPoikela Tuomas S.en
CreatorFaccio Federicoen
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryStandard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. Bulk CMOS at 65 nm is a strong contender for such electronics due to a favorable trade-off among cost, performance, and TID-sensitivity. The present paper presents the extension of a foundry-provided PDK to cover also high TID effects. TID experiments have been carried out up to 500 Mrad. The PDK is based on binned BSIM4 models, which are adapted to different TID levels. Hence, designers may choose among different TID levels for their designs, contributing importantly to radiation-hard design practice.en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2019-09-06-
Date of Publication2018-
SubjectBSIMen
SubjectCompact modelen
SubjectHigh-Luminosity Large Hadron Collideren
SubjectIonizing radiationen
SubjectMOSFETen
SubjectRadiation hardnessen
SubjectTotal ionizing doseen
Bibliographic CitationA. Nikolaou, M. Bucher, N. Makris, A. Papadopoulou, L. Chevas, G. Borghello, H.D. Koch, K. Kloukinas, T.S. Poikela and F. Faccio, "Extending a 65nm CMOS process design kit for high total ionizing dose effects," in 7th International Conference on Modern Circuits and Systems Technologies, 2018, pp. 1-4. doi: 10.1109/MOCAST.2018.8376561en

Services

Statistics