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Charge-based modeling of long-channel symmetric double-gate junction FETs-Part I: drain current and transconductances

Makris Nikolaos, Jazaeri, Farzan 1984-, Sallese, Jean-Michel 1964-, Sharma Rupendra Kumar, Bucher Matthias

Απλή Εγγραφή

URIhttp://purl.tuc.gr/dl/dias/3E0F8C3A-1AEC-4744-BFC1-51E75746F36E-
Αναγνωριστικόhttps://doi.org/10.1109/TED.2018.2838101-
Αναγνωριστικόhttps://ieeexplore.ieee.org/document/8371530-
Γλώσσαen-
Μέγεθος7 pagesen
ΤίτλοςCharge-based modeling of long-channel symmetric double-gate junction FETs-Part I: drain current and transconductancesen
ΔημιουργόςMakris Nikolaosen
ΔημιουργόςΜακρης Νικολαοςel
ΔημιουργόςJazaeri, Farzan 1984-en
ΔημιουργόςSallese, Jean-Michel 1964-en
ΔημιουργόςSharma Rupendra Kumaren
ΔημιουργόςBucher Matthiasen
ΔημιουργόςBucher Matthiasel
ΕκδότηςInstitute of Electrical and Electronics Engineersen
ΠερίληψηThe double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of not only device fabrication but also its operation. The device has been largely used in low-noise applications, but also more recently, in power electronics. Physics-based compact models for JFETs, contrary to MOSFETs, are, however, scarce. In this paper, an analytical, charge-based model is established for the mobile charges, drain current, and transconductances of symmetric DG JFETs, covering all regions of device operation. The model is unified and continuous from subthreshold to linear and saturation operation and is valid over a large temperature range. This charge-based model constitutes the basis of a full compact model of the DG JFET.en
ΤύποςPeer-Reviewed Journal Publicationen
ΤύποςΔημοσίευση σε Περιοδικό με Κριτέςel
Άδεια Χρήσηςhttp://creativecommons.org/licenses/by/4.0/en
Ημερομηνία2019-09-03-
Ημερομηνία Δημοσίευσης2018-
Θεματική ΚατηγορίαAnalytical modelen
Θεματική ΚατηγορίαCircuit simulationen
Θεματική ΚατηγορίαCompact modelen
Θεματική ΚατηγορίαJFETen
Θεματική ΚατηγορίαJunction field-effect transistoren
Θεματική ΚατηγορίαTemperature effecten
Βιβλιογραφική ΑναφοράN. Makris, F. Jazaeri, J.-M. Sallese, R.K. Sharma and M. Bucher, "Charge-based modeling of long-channel symmetric double-gate junction FETs-Part I: drain current and transconductances," IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2744-2750, Jul. 2018. doi: 10.1109/TED.2018.2838101en

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