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Charge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitances

Makris Nikolaos, Jazaeri, Farzan 1984-, Sallese, Jean-Michel 1964-, Bucher Matthias

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URIhttp://purl.tuc.gr/dl/dias/8359EE6E-3589-4084-809F-B31E5F50142D-
Identifierhttps://doi.org/10.1109/TED.2018.2838090-
Identifierhttps://ieeexplore.ieee.org/document/8374091-
Languageen-
Extent6 pagesen
TitleCharge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitancesen
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorJazaeri, Farzan 1984-en
CreatorSallese, Jean-Michel 1964-en
CreatorBucher Matthiasen
CreatorBucher Matthiasel
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryA compact model for the dynamic operation of double-gate junction field-effect transistors is established in this paper. Analytical model expressions are developed for the total node charges and transcapacitances valid from subthreshold to above threshold and from linear to saturation operation. The model is shown to conserve symmetry among source and drain, and circumvents problems at zero drain-to-source bias.en
Type of ItemPeer-Reviewed Journal Publicationen
Type of ItemΔημοσίευση σε Περιοδικό με Κριτέςel
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2019-09-02-
Date of Publication2018-
SubjectAnalytical modelen
SubjectCircuit simulationen
SubjectDynamic modelen
SubjectHigh frequencyen
SubjectJunction field-effect transistor (JFET)en
SubjectTranscapacitance en
Bibliographic CitationN. Makris, F. Jazaeri, J.-M. Sallese and M. Bucher, "Charge-based modeling of long-channel symmetric double-gate junction FETs-Part II: total charges and transcapacitances," IEEE Trans. Electron Devices, vol. 65, no. 7, pp. 2751-2756, July 2018. doi: 10.1109/TED.2018.2838090en

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