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Technical University of Crete
Technical University of Crete
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| URI | http://purl.tuc.gr/dl/dias/26226CA0-D138-4FCF-A9EB-7AE390F14254 | - |
| Identifier | https://doi.org/10.23919/MIXDES.2018.8436809 | - |
| Identifier | https://ieeexplore.ieee.org/document/8436809 | - |
| Language | en | - |
| Extent | 6 pages | en |
| Title | Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS | en |
| Creator | Chevas Loukas | en |
| Creator | Χεβας Λουκας | el |
| Creator | Nikolaou Aristeidis | en |
| Creator | Νικολαου Αριστειδης | el |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Papadopoulou Alexia | en |
| Creator | Παπαδοπουλου Αλεξια | el |
| Creator | Zografos Apostolos | en |
| Creator | Ζωγραφος Αποστολος | el |
| Creator | Borghello Giulio | en |
| Creator | Koch Henri D. | en |
| Creator | Faccio Federico | en |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Content Summary | Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated at high TID is investigated. Experiments are carried out for TID of 100, 200 and up to 500 Mrad(SiO2) and at -30°C, 0°C, and 25°C. We find that parameters are least degraded at -30°C. However, short-channel NMOSTs show a significant degradation of slope factor, which is more severe at 0°C than at 25°C. In contrast, the slope factor in short-channel PMOSTs shows lowest sensitivity to high TID. | en |
| Type of Item | Πλήρης Δημοσίευση σε Συνέδριο | el |
| Type of Item | Conference Full Paper | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2019-06-19 | - |
| Date of Publication | 2018 | - |
| Subject | Analog parameter | en |
| Subject | High Luminosity-Large Hadron Collider | en |
| Subject | Ionizing radiation | en |
| Subject | MOSFET | en |
| Subject | Total ionizing dose (TID) | en |
| Bibliographic Citation | L. Chevas, A. Nikolaou, M. Bucher, N. Makris, A. Papadopoulou, A. Zografos, G. Borghello, H. D. Koch and E. Faccio, "Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS" in 25th International Conference "Mixed Design of Integrated Circuits and Systems", 2018, pp. 313-318. doi: 10.23919/MIXDES.2018.8436809 | en |
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