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Modelling of 4H-SiC VJFETS with self-aligned contacts

Zekentes, Konstantinos, Vassilevski Konstantin V., Stavrinidis Antonis, Konstantinidis Georgios, Kayambaki Maria, Vamvoukakis Konstantinos, Vassakis Emmanouil, Peyré Hervé, Makris Nikolaos, Bucher Matthias, Schmid Patrick, Stefanakis Dionyssios, Tassis, Dimitrios

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URIhttp://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242-
Identifierhttps://www.scientific.net/MSF.858.913-
Identifierhttps://doi.org/10.4028/www.scientific.net/MSF.858.913-
Languageen-
Extent4 pagesen
TitleModelling of 4H-SiC VJFETS with self-aligned contactsen
CreatorZekentes, Konstantinosen
CreatorVassilevski Konstantin V.en
CreatorStavrinidis Antonisen
CreatorKonstantinidis Georgiosen
CreatorΚωνσταντινιδης Γεωργιοςel
CreatorKayambaki Mariaen
CreatorVamvoukakis Konstantinosen
CreatorΒαμβουκακης Κωνσταντινοςel
CreatorVassakis Emmanouilen
CreatorPeyré Hervéen
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorSchmid Patrickel
CreatorStefanakis Dionyssiosen
CreatorTassis, Dimitriosen
PublisherTrans Tech Publicationsen
Content SummaryPurely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtained on a series of fabricated self-aligned devices with two different channel lengths (0.3 and 1.1μm) and various channel widths (1.5, 2, 2.5, 3, 4 and 5 μm). For all the considered models I-V and C-V characteristics could be satisfactorily simulated.en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2018-11-16-
Date of Publication2016-
SubjectCompact modelen
SubjectJFETen
SubjectTCADen
SubjectTransistoren
Bibliographic CitationK. Zekentes, K. Vassilevski, A. Stavrinidis, G. Konstantinidis, M. Kayambaki, K. Vamvoukakis, E. Vassakis, H. Peyre, N. Makris, M. Bucher, P. Schmid, D. Stefanakis, and D. Tassis, "Modelling of 4H-SiC VJFETS with self-aligned contacts," in 16th International Conference on Silicon Carbide and Related Materials, 2016, pp. 913-916. doi: 10.4028/www.scientific.net/MSF.858.913en

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