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Institutional Repository [SANDBOX]
Technical University of Crete
Technical University of Crete
EN
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| URI | http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242 | - |
| Identifier | https://www.scientific.net/MSF.858.913 | - |
| Identifier | https://doi.org/10.4028/www.scientific.net/MSF.858.913 | - |
| Language | en | - |
| Extent | 4 pages | en |
| Title | Modelling of 4H-SiC VJFETS with self-aligned contacts | en |
| Creator | Zekentes, Konstantinos | en |
| Creator | Vassilevski Konstantin V. | en |
| Creator | Stavrinidis Antonis | en |
| Creator | Konstantinidis Georgios | en |
| Creator | Κωνσταντινιδης Γεωργιος | el |
| Creator | Kayambaki Maria | en |
| Creator | Vamvoukakis Konstantinos | en |
| Creator | Βαμβουκακης Κωνσταντινος | el |
| Creator | Vassakis Emmanouil | en |
| Creator | Peyré Hervé | en |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Creator | Schmid Patrick | el |
| Creator | Stefanakis Dionyssios | en |
| Creator | Tassis, Dimitrios | en |
| Publisher | Trans Tech Publications | en |
| Content Summary | Purely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtained on a series of fabricated self-aligned devices with two different channel lengths (0.3 and 1.1μm) and various channel widths (1.5, 2, 2.5, 3, 4 and 5 μm). For all the considered models I-V and C-V characteristics could be satisfactorily simulated. | en |
| Type of Item | Πλήρης Δημοσίευση σε Συνέδριο | el |
| Type of Item | Conference Full Paper | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2018-11-16 | - |
| Date of Publication | 2016 | - |
| Subject | Compact model | en |
| Subject | JFET | en |
| Subject | TCAD | en |
| Subject | Transistor | en |
| Bibliographic Citation | K. Zekentes, K. Vassilevski, A. Stavrinidis, G. Konstantinidis, M. Kayambaki, K. Vamvoukakis, E. Vassakis, H. Peyre, N. Makris, M. Bucher, P. Schmid, D. Stefanakis, and D. Tassis, "Modelling of 4H-SiC VJFETS with self-aligned contacts," in 16th International Conference on Silicon Carbide and Related Materials, 2016, pp. 913-916. doi: 10.4028/www.scientific.net/MSF.858.913 | en |
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