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Compact model for variability of low frequency noise due to number fluctuation effect

Mavredakis Nikolaos, Bucher Matthias

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URIhttp://purl.tuc.gr/dl/dias/CE80F943-FCD0-4C9A-AF94-76E0719D05E3-
Identifierhttps://ieeexplore.ieee.org/document/7599686/-
Identifierhttps://doi.org/10.1109/ESSDERC.2016.7599686-
Languageen-
Extent4 pagesen
TitleCompact model for variability of low frequency noise due to number fluctuation effecten
CreatorMavredakis Nikolaosen
CreatorΜαυρεδακης Νικολαοςel
CreatorBucher Matthiasen
CreatorBucher Matthiasel
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryVariability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number fluctuation effect. A new bias- and area-dependent, physics-based, compact model for 1/f noise variability is proposed. The model exploits the log-normal behavior of LFN. The model is shown to give consistent results for average noise, variance, and standard deviation, covering bias-dependence and scaling over a large range of geometry.en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2018-10-09-
Date of Publication2016-
SubjectLFNen
SubjectLow frequency noiseen
SubjectMOSFETen
SubjectNoise variabilityen
Bibliographic CitationN. Mavredakis and M. Bucher, "Compact model for variability of low frequency noise due to number fluctuation effect," in 46th European Solid-State Device Research Conference, 2016, pp. 464-467. doi: 10.1109/ESSDERC.2016.7599686en

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