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Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs

Bucher Matthias, Nikolaou Aristeidis, Mavredakis Nikolaos, Makris Nikolaos, Coustans Mathieu, Lolivier, Jérôme 1978-, Habaš Predrag, Acović, Alexandre, Meyer René

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URIhttp://purl.tuc.gr/dl/dias/07573443-AB28-4F1C-BB86-778C115FA01A-
Identifierhttps://ieeexplore.ieee.org/document/7954285/-
Identifierhttps://doi.org/10.1109/ICMTS.2017.7954285-
Languageen-
TitleVariability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETsen
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorNikolaou Aristeidisen
CreatorΝικολαου Αριστειδηςel
CreatorMavredakis Nikolaosen
CreatorΜαυρεδακης Νικολαοςel
CreatorMakris Nikolaosen
CreatorΜακρης Νικολαοςel
CreatorCoustans Mathieuen
CreatorLolivier, Jérôme 1978-en
CreatorHabaš Predragen
CreatorAcović, Alexandreen
CreatorMeyer Renéen
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryVariability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, with particular emphasis on weak inversion region. Enclosed gate transistors show an improved gate voltage mismatch in weak inversion. A compact MOSFET model for LFN and its variability, based on number fluctuation theory, is shown to cover well the behavior of either type of transistors. Lower levels of noise as well as lower variability of noise are observed in enclosed gate transistors. en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2018-05-08-
Date of Publication2017-
SubjectLFNen
SubjectLow Frequency Noiseen
SubjectRTNen
SubjectRandom Telegraph Noiseen
SubjectMOSFETen
Bibliographic CitationM. Bucher, A. Nikolaou, N. Mavredakis, N. Makris, M. Coustans, J. Lolivier, P. Habas, A. Acovic and R. Meyer, "Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs" in International Conference on Microelectronic Test Structures, 2017. doi: 10.1109/ICMTS.2017.7954285 en

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