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Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors

Nikolaou Aristeidis, Mavredakis Nikolaos, Bucher Matthias, Habaš Predrag, Acović, Alexandre, Meyer René

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URIhttp://purl.tuc.gr/dl/dias/EDF37EBB-CE96-41BF-9707-74A589088EAB-
Identifierhttps://ieeexplore.ieee.org/document/7986018/-
Identifierhttps://doi.org/10.1109/ICNF.2017.7986018-
Languageen-
TitleStatistical analysis of 1/f noise in enclosed-gate N- and PMOS transistorsen
CreatorNikolaou Aristeidisen
CreatorΝικολαου Αριστειδηςel
CreatorMavredakis Nikolaosen
CreatorΜαυρεδακης Νικολαοςel
CreatorBucher Matthiasen
CreatorBucher Matthiasel
CreatorHabaš Predragen
CreatorAcović, Alexandreen
CreatorMeyer Renéen
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryLow frequency noise (LFN) characteristics can limit the performance of conventional CMOS designs. In the context of this paper enclosed gate N- and P-MOS transistors will be examined regarding LFN mean value and its variability in various biasing conditions. In subthreshold region enclosed gate PMOS transistors show a significantly reduced LFN variability compared to the NMOS counterpart. Both devices present an improved noise performance. The LFN compact MOSFET model applied proved to be well suited to statistically model LFN in enclosed gate transistors.en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2018-04-25-
Date of Publication2017-
SubjectEnclosed gateen
SubjectLow frequency noiseen
SubjectVariabilityen
Bibliographic CitationA. Nikolaou, N. Mavredakis, M. Bucher, P. Habas, A. Acovic and R. Meyer, "Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors," in International Conference on Noise and Fluctuations, 2017. doi : 10.1109/ICNF.2017.7986018en

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