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Statistical analysis of 1/f noise in enclosed-gate N- and PMOS transistors

Nikolaou Aristeidis, Mavredakis Nikolaos, Bucher Matthias, Habaš Predrag, Acović, Alexandre, Meyer René

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Περίληψη

Low frequency noise (LFN) characteristics can limit the performance of conventional CMOS designs. In the context of this paper enclosed gate N- and P-MOS transistors will be examined regarding LFN mean value and its variability in various biasing conditions. In subthreshold region enclosed gate PMOS transistors show a significantly reduced LFN variability compared to the NMOS counterpart. Both devices present an improved noise performance. The LFN compact MOSFET model applied proved to be well suited to statistically model LFN in enclosed gate transistors.

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