URI | http://purl.tuc.gr/dl/dias/C37E6B65-EA3C-49F8-81A1-2AFCA6C497DE | - |
Αναγνωριστικό | https://ieeexplore.ieee.org/document/7985953/ | - |
Αναγνωριστικό | https://doi.org/10.1109/ICNF.2017.7985953 | - |
Γλώσσα | en | - |
Τίτλος | Variability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technology | en |
Δημιουργός | Coustans Mathieu | en |
Δημιουργός | Jazaeri, Farzan 1984- | en |
Δημιουργός | Enz, Christian C | en |
Δημιουργός | Krummenacher Francois | en |
Δημιουργός | Kayal, Maher | en |
Δημιουργός | Meyer René | en |
Δημιουργός | Acović, Alexandre | en |
Δημιουργός | Habaš Predrag | en |
Δημιουργός | Lolivier, Jérôme 1978- | en |
Δημιουργός | Bucher Matthias | en |
Δημιουργός | Bucher Matthias | el |
Εκδότης | Institute of Electrical and Electronics Engineers | en |
Περίληψη | Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak inversion region. The proposed device shows improved gate voltage mismatch in weak inversion with respect to standard CMOS for a given geometry. Relying on the carrier number fluctuation theory, the Low Frequency Noise and its variability have been represented by a compact model. | en |
Τύπος | Πλήρης Δημοσίευση σε Συνέδριο | el |
Τύπος | Conference Full Paper | en |
Άδεια Χρήσης | http://creativecommons.org/licenses/by/4.0/ | en |
Ημερομηνία | 2018-04-25 | - |
Ημερομηνία Δημοσίευσης | 2017 | - |
Θεματική Κατηγορία | Low voltage device | en |
Θεματική Κατηγορία | Low-power device | en |
Θεματική Κατηγορία | Matching | en |
Θεματική Κατηγορία | Noise | en |
Βιβλιογραφική Αναφορά | M. Coustans, F. Jazaeri, C. Enz, F. Krummenacher, M. Kayal, R. Meyer, A. Acovic, P. Habaš, J. Lolivier and M. Bucher, "Variability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technology," in International Conference on Noise and Fluctuations, 2017. doi : 10.1109/ICNF.2017.7985953
| en |