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Variability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technology

Coustans Mathieu, Jazaeri, Farzan 1984-, Enz, Christian C, Krummenacher Francois, Kayal, Maher, Meyer René, Acović, Alexandre, Habaš Predrag, Lolivier, Jérôme 1978-, Bucher Matthias

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URIhttp://purl.tuc.gr/dl/dias/C37E6B65-EA3C-49F8-81A1-2AFCA6C497DE-
Identifierhttps://ieeexplore.ieee.org/document/7985953/-
Identifierhttps://doi.org/10.1109/ICNF.2017.7985953-
Languageen-
TitleVariability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technologyen
CreatorCoustans Mathieuen
CreatorJazaeri, Farzan 1984-en
CreatorEnz, Christian Cen
CreatorKrummenacher Francoisen
CreatorKayal, Maheren
CreatorMeyer Renéen
CreatorAcović, Alexandreen
CreatorHabaš Predragen
CreatorLolivier, Jérôme 1978-en
CreatorBucher Matthiasen
CreatorBucher Matthiasel
PublisherInstitute of Electrical and Electronics Engineersen
Content SummaryVariability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak inversion region. The proposed device shows improved gate voltage mismatch in weak inversion with respect to standard CMOS for a given geometry. Relying on the carrier number fluctuation theory, the Low Frequency Noise and its variability have been represented by a compact model.en
Type of ItemΠλήρης Δημοσίευση σε Συνέδριοel
Type of ItemConference Full Paperen
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2018-04-25-
Date of Publication2017-
SubjectLow voltage deviceen
SubjectLow-power deviceen
SubjectMatchingen
SubjectNoiseen
Bibliographic CitationM. Coustans, F. Jazaeri, C. Enz, F. Krummenacher, M. Kayal, R. Meyer, A. Acovic, P. Habaš, J. Lolivier and M. Bucher, "Variability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technology," in International Conference on Noise and Fluctuations, 2017. doi : 10.1109/ICNF.2017.7985953 en

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