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Institutional Repository [SANDBOX]
Technical University of Crete
Technical University of Crete
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| URI: | http://purl.tuc.gr/dl/dias/C37E6B65-EA3C-49F8-81A1-2AFCA6C497DE | ||
| Year | 2017 | ||
| Type of Item | Conference Full Paper | ||
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| Bibliographic Citation | M. Coustans, F. Jazaeri, C. Enz, F. Krummenacher, M. Kayal, R. Meyer, A. Acovic, P. Habaš, J. Lolivier and M. Bucher, "Variability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technology," in International Conference on Noise and Fluctuations, 2017. doi : 10.1109/ICNF.2017.7985953 https://doi.org/10.1109/ICNF.2017.7985953 | ||
| Appears in Collections |
Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak inversion region. The proposed device shows improved gate voltage mismatch in weak inversion with respect to standard CMOS for a given geometry. Relying on the carrier number fluctuation theory, the Low Frequency Noise and its variability have been represented by a compact model.
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