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Variability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technology

Coustans Mathieu, Jazaeri, Farzan 1984-, Enz, Christian C, Krummenacher Francois, Kayal, Maher, Meyer René, Acović, Alexandre, Habaš Predrag, Lolivier, Jérôme 1978-, Bucher Matthias

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URI: http://purl.tuc.gr/dl/dias/C37E6B65-EA3C-49F8-81A1-2AFCA6C497DE
Έτος 2017
Τύπος Πλήρης Δημοσίευση σε Συνέδριο
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Βιβλιογραφική Αναφορά M. Coustans, F. Jazaeri, C. Enz, F. Krummenacher, M. Kayal, R. Meyer, A. Acovic, P. Habaš, J. Lolivier and M. Bucher, "Variability of low frequency noise and mismatch in CORNER DOPED and standard CMOS technology," in International Conference on Noise and Fluctuations, 2017. doi : 10.1109/ICNF.2017.7985953 https://doi.org/10.1109/ICNF.2017.7985953
Εμφανίζεται στις Συλλογές
Δημοσιεύσεις σε Συνέδρια στην Κοινότητα Σχολή Ηλεκτρολόγων Μηχανικών και Μηχανικών Υπολογιστών

Περίληψη

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is a main concern in analog CMOS integrated circuits. For instance circuits such as current reference, SRAM, ring oscillators are ultimately limited by noise level and mismatch. In this work, CORNER DOPED devices have been fabricated, measured, and finally compared with standard CMOS technology with particular emphasis on weak inversion region. The proposed device shows improved gate voltage mismatch in weak inversion with respect to standard CMOS for a given geometry. Relying on the carrier number fluctuation theory, the Low Frequency Noise and its variability have been represented by a compact model.

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