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Efficiency calibration of a Ge(In) semiconductor detector by thin- and thick-arget PIXE†

Kallithrakas-Kontos Nikolaos, Katsanos Anastasios

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URIhttp://purl.tuc.gr/dl/dias/737BDAFB-9298-4074-9D47-ACB027B0C038-
Identifierhttps://doi.org/10.1002/xrs.1300230211-
Identifierhttps://onlinelibrary.wiley.com/doi/abs/10.1002/xrs.1300230211-
Languageen-
Extent4 pagesen
TitleEfficiency calibration of a Ge(In) semiconductor detector by thin- and thick-arget PIXE†en
CreatorKallithrakas-Kontos Nikolaosen
CreatorΚαλλιθρακας-Κοντος Νικολαοςel
CreatorKatsanos Anastasiosen
CreatorΚατσανος Αναστασιοςel
PublisherJohn Wiley and Sonsen
DescriptionΔημοσίευση σε επιστημονικό περιοδικό el
Content SummaryThe efficiency of a Ge(In) semiconductor x-ray detector was measured in the energy region 1‒25 keV using proton-induced x-rays from thick targets and from thin targets of standard thickness, and the results of the two calibration methods were compared. A proton energy of 2.00 MeV was used in an external beam facility. A model based on fundamental parameters (mass absorption coefficients, fluorescence yields and relative x-ray emission rates) was used to reproduce the experimental results.en
Type of ItemPeer-Reviewed Journal Publicationen
Type of ItemΔημοσίευση σε Περιοδικό με Κριτέςel
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2015-10-12-
Date of Publication1994-
SubjectGe(In) semiconductor en
Bibliographic CitationN. Kallithrakas-Kontos and A.A. Katsanos, "Efficiency calibration of a Ge(In) semiconductor detector by thin- and thick-arget PIXE" X-Ray Spectrom., vol. 23, no. 2, pp. 96-99, Mar.-Aprl. 1994. doi: 10.1002/xrs.1300230211en

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