Institutional Repository [SANDBOX]
Technical University of Crete
EN  |  EL

Search

Browse

My Space

Study of low frequency noise in High Voltage MOS transistor

Fellas Konstantinos

Simple record


URIhttp://purl.tuc.gr/dl/dias/E1728BC3-3934-45B8-AFEC-4FCC9F3C9382-
Identifierhttps://doi.org/10.26233/heallink.tuc.22870-
Languageen-
Extent43 pagesen
TitleStudy of low frequency noise in High Voltage MOS transistoren
CreatorFellas Konstantinosen
CreatorΦελλας Κωνσταντινοςel
Contributor [Thesis Supervisor]Bucher Matthiasen
Contributor [Thesis Supervisor]Bucher Matthiasel
Contributor [Committee Member]Balas Costasen
Contributor [Committee Member]Μπαλας Κωσταςel
Contributor [Committee Member]Koutroulis Eftychiosen
Contributor [Committee Member]Κουτρουλης Ευτυχιοςel
PublisherΠολυτεχνείο Κρήτηςel
PublisherTechnical University of Creteen
Academic UnitTechnical University of Crete::School of Electronic and Computer Engineeringen
Academic UnitΠολυτεχνείο Κρήτης::Σχολή Ηλεκτρονικών Μηχανικών και Μηχανικών Υπολογιστώνel
DescriptionΔιπλωματική εργασία που παραδώθηκε στην σχολή ΗΜΜΥ Πολυτεχνείου Κρήτης για απόκτηση πτυχίουel
Content SummaryHVMOSFETs find many different applications such as switching applications, input-output operations, voltage conversions, RF amplification etc. The effect of drift region on 1/f noise remained unclear until recently due to the difficulty of performing 1/f noise measurements under high drain voltages, on the order of tens of Volt. This is mainly due to the lack of adequate measurement equipment, which usually restricts low frequency noise to be measured up to just a few Volt, usually generated from batteries. A 1/f noise parameter extraction method for high-voltage (HV-)MOSFETs at 3V drain bias is presented in this thesis. In this region the overall noise is mostly dominated by the noise originating in the channel. The bias dependence of flicker noise, related to transconductance-to-current ratio, allows for an easy means to determine related noise parameters. Though measured data is limited, parameters related to carrier number fluctuation effect may be found. 50 V N and P-channel HV-MOSFETs are investigated for long as well as short channel lengths. The parameter extraction method is applied to a recently established 1/f noise model for HV-MOSFETs, showing a good agreement among model and experimental data. en
Type of ItemΔιπλωματική Εργασίαel
Type of ItemDiploma Worken
Licensehttp://creativecommons.org/licenses/by/4.0/en
Date of Item2014-10-07-
Date of Publication2014-
SubjectMOSFETen
Subjectmetal oxide semiconductor field effect transistorsen
Subjectmosfeten
Bibliographic CitationKonstantinos Fellas, "Study of low frequency noise in High Voltage MOS transistor", Diploma Work, School of Electronic and Computer Engineering, Technical University of Crete, Chania, Greece, 2014en
Bibliographic CitationΚωνσταντίνος Φελλάς, "Study of low frequency noise in High Voltage MOS transistor", Διπλωματική Εργασία, Σχολή Ηλεκτρονικών Μηχανικών και Μηχανικών Υπολογιστών, Πολυτεχνείο Κρήτης, Χανιά, Ελλάς, 2014el

Available Files

Services

Statistics