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Institutional Repository [SANDBOX]
Technical University of Crete
Technical University of Crete
EN
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EL
| URI | http://purl.tuc.gr/dl/dias/E0F555C4-D220-40B9-81F3-A8E010B6AE56 | - |
| Identifier | https://doi.org/10.26233/heallink.tuc.103806 | - |
| Language | en | - |
| Extent | 132 pages | en |
| Title | Verilog-A Based Implementation of a MOSFET Model for Analog Integrated Circuit | en |
| Creator | Gallego Velazquez Alba | en |
| Creator | Gallego Velazquez Alba | el |
| Contributor [Thesis Supervisor] | Bucher Matthias | en |
| Contributor [Thesis Supervisor] | Bucher Matthias | el |
| Contributor [Committee Member] | Gyftakis Konstantinos | en |
| Contributor [Committee Member] | Γυφτακης Κωνσταντινος | el |
| Contributor [Committee Member] | Morinigo-Sotelo Daniel | en |
| Publisher | Πολυτεχνείο Κρήτης | el |
| Publisher | Technical University of Crete | en |
| Academic Unit | Technical University of Crete::School of Electrical and Computer Engineering | en |
| Academic Unit | Πολυτεχνείο Κρήτης::Σχολή Ηλεκτρολόγων Μηχανικών και Μηχανικών Υπολογιστών | el |
| Description | A technical report of the procedure to build a MOSFET model | en |
| Content Summary | Recent advances in the field of analogue electronics have led to an increased demand for the creation of programmable models of analogue circuits. The present thesis sets out the development and implementation of a compact model of a MOSFET, based on the theoretical EKV model, and implemented using the Verilog-A language. The utilization of simulation and compilation environments, such as the open server OpenVAF and Ngspice, is instrumental in facilitating the effective execution of the work. The construction of a model that can perform the function of an nMOS or a pMOS nanometric operating in a saturated state is facilitated by these. In this model, physical dependencies such as temperature, channel length, and second-order effects are incorporated, ensuring the attainment of continuous expressions for all inversion regions. The model's behaviour is validated against experimental data by means of simulation, thus enabling the evaluation of parameters such as drain current, inversion coefficient, capacitances, transconductances, and response to thermal and flicker noise. This results in an accurate, compact and versatile model, which is suitable for supporting integrated analog circuits designs with a wide range of values for the inversion coefficient. | en |
| Type of Item | Διπλωματική Εργασία | el |
| Type of Item | Diploma Work | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2025-07-10 | - |
| Date of Publication | 2025 | - |
| Subject | Analogue electronics and microelectronics | en |
| Bibliographic Citation | Gallego Velazquez Alba, "Verilog-A Based Implementation of a MOSFET Model for Analog Integrated Circuit", Diploma Work, School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece, 2025 | en |
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