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| URI | http://purl.tuc.gr/dl/dias/E21C281B-422F-47D0-9767-F95A62D5B5F8 | - |
| Αναγνωριστικό | https://doi.org/10.1109/LAEDC54796.2022.9908184 | - |
| Αναγνωριστικό | https://ieeexplore.ieee.org/document/9908184 | - |
| Γλώσσα | en | - |
| Μέγεθος | 4 pages | en |
| Τίτλος | A contribution to GaN HEMT modeling and parameter extraction including temperature dependence | en |
| Δημιουργός | Chevas Loukas | en |
| Δημιουργός | Χεβας Λουκας | el |
| Δημιουργός | Makris Nikolaos | en |
| Δημιουργός | Μακρης Νικολαος | el |
| Δημιουργός | Kayambaki Maria | en |
| Δημιουργός | Kostopoulos Athanasios | en |
| Δημιουργός | Stavrinidis Antonios | en |
| Δημιουργός | Konstantinidis George | en |
| Δημιουργός | Bucher Matthias | en |
| Δημιουργός | Bucher Matthias | el |
| Εκδότης | Institute of Electrical and Electronics Engineers | en |
| Περιγραφή | We acknowledge support of this work by the project “National Infrastructure in Nanotechnology, Advanced Materials and Micro-/Nanoelectronics (INNOVATION-EL)” (MIS 5002772) which is implemented under the Action “Reinforcement of the Research and Innovation Infrastructure” of the Operational Programme Competitiveness, Entrepreneurship and Innovation” (NSRF 2014-2020), co-financed by Greece and the European Union (European Regional Development Fund). This research has been co-financed by the European Regional Development Fund of the European Union and Greek national funds through the Operational Program Competitiveness, Entrepreneurship and Innovation, under the call RESEARCH – CREATE – INNOVATE (project code: T2EDK-00340). | en |
| Περίληψη | The increased usage of high electron mobility transistors (HEMTs), especially using GaN, for a large range of applications demands for efficient circuit design models. The paper discusses the procedures for determining key parameters of a physics-based HEMT model for circuit design. HEMTs using AlGaN/GaN epitaxy on Si substrate fabricated at IESL-FORTH are used. Basic parameters such as barrier capacitance, threshold voltage, slope factor, and mobility are determined from experimental characteristics over a large range of temperature. It is shown that the behavior of HEMTs, in terms of transconductance efficiency, is in many ways similar to that of MOSFETs. | en |
| Τύπος | Σύντομη Δημοσίευση σε Συνέδριο | el |
| Τύπος | Conference Short Paper | en |
| Άδεια Χρήσης | http://creativecommons.org/licenses/by/4.0/ | en |
| Ημερομηνία | 2024-08-02 | - |
| Ημερομηνία Δημοσίευσης | 2022 | - |
| Θεματική Κατηγορία | High electron mobility transistor | en |
| Θεματική Κατηγορία | HEMT | en |
| Θεματική Κατηγορία | Threshold voltage | en |
| Θεματική Κατηγορία | Mobility | en |
| Θεματική Κατηγορία | Transconductance | en |
| Βιβλιογραφική Αναφορά | L. Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, G. Konstantinidis, and M. Bucher, "A contribution to GaN HEMT modeling and parameter extraction including temperature dependence," in Proceedings of the 2022 IEEE Latin American Electron Devices Conference (LAEDC 2022), Cancun, Mexico, 2022, doi: 10.1109/LAEDC54796.2022.9908184. | en |
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