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Technical University of Crete
Technical University of Crete
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| URI | http://purl.tuc.gr/dl/dias/E21C281B-422F-47D0-9767-F95A62D5B5F8 | - |
| Identifier | https://doi.org/10.1109/LAEDC54796.2022.9908184 | - |
| Identifier | https://ieeexplore.ieee.org/document/9908184 | - |
| Language | en | - |
| Extent | 4 pages | en |
| Title | A contribution to GaN HEMT modeling and parameter extraction including temperature dependence | en |
| Creator | Chevas Loukas | en |
| Creator | Χεβας Λουκας | el |
| Creator | Makris Nikolaos | en |
| Creator | Μακρης Νικολαος | el |
| Creator | Kayambaki Maria | en |
| Creator | Kostopoulos Athanasios | en |
| Creator | Stavrinidis Antonios | en |
| Creator | Konstantinidis George | en |
| Creator | Bucher Matthias | en |
| Creator | Bucher Matthias | el |
| Publisher | Institute of Electrical and Electronics Engineers | en |
| Description | We acknowledge support of this work by the project “National Infrastructure in Nanotechnology, Advanced Materials and Micro-/Nanoelectronics (INNOVATION-EL)” (MIS 5002772) which is implemented under the Action “Reinforcement of the Research and Innovation Infrastructure” of the Operational Programme Competitiveness, Entrepreneurship and Innovation” (NSRF 2014-2020), co-financed by Greece and the European Union (European Regional Development Fund). This research has been co-financed by the European Regional Development Fund of the European Union and Greek national funds through the Operational Program Competitiveness, Entrepreneurship and Innovation, under the call RESEARCH – CREATE – INNOVATE (project code: T2EDK-00340). | en |
| Content Summary | The increased usage of high electron mobility transistors (HEMTs), especially using GaN, for a large range of applications demands for efficient circuit design models. The paper discusses the procedures for determining key parameters of a physics-based HEMT model for circuit design. HEMTs using AlGaN/GaN epitaxy on Si substrate fabricated at IESL-FORTH are used. Basic parameters such as barrier capacitance, threshold voltage, slope factor, and mobility are determined from experimental characteristics over a large range of temperature. It is shown that the behavior of HEMTs, in terms of transconductance efficiency, is in many ways similar to that of MOSFETs. | en |
| Type of Item | Σύντομη Δημοσίευση σε Συνέδριο | el |
| Type of Item | Conference Short Paper | en |
| License | http://creativecommons.org/licenses/by/4.0/ | en |
| Date of Item | 2024-08-02 | - |
| Date of Publication | 2022 | - |
| Subject | High electron mobility transistor | en |
| Subject | HEMT | en |
| Subject | Threshold voltage | en |
| Subject | Mobility | en |
| Subject | Transconductance | en |
| Bibliographic Citation | L. Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, G. Konstantinidis, and M. Bucher, "A contribution to GaN HEMT modeling and parameter extraction including temperature dependence," in Proceedings of the 2022 IEEE Latin American Electron Devices Conference (LAEDC 2022), Cancun, Mexico, 2022, doi: 10.1109/LAEDC54796.2022.9908184. | en |
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