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A contribution to GaN HEMT modeling and parameter extraction including temperature dependence

Chevas Loukas, Makris Nikolaos, Kayambaki Maria, Kostopoulos Athanasios, Stavrinidis Antonios, Konstantinidis George, Bucher Matthias

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URIhttp://purl.tuc.gr/dl/dias/E21C281B-422F-47D0-9767-F95A62D5B5F8-
Αναγνωριστικόhttps://doi.org/10.1109/LAEDC54796.2022.9908184-
Αναγνωριστικόhttps://ieeexplore.ieee.org/document/9908184-
Γλώσσαen-
Μέγεθος4 pagesen
ΤίτλοςA contribution to GaN HEMT modeling and parameter extraction including temperature dependenceen
ΔημιουργόςChevas Loukasen
ΔημιουργόςΧεβας Λουκαςel
ΔημιουργόςMakris Nikolaosen
ΔημιουργόςΜακρης Νικολαοςel
ΔημιουργόςKayambaki Mariaen
ΔημιουργόςKostopoulos Athanasiosen
ΔημιουργόςStavrinidis Antoniosen
ΔημιουργόςKonstantinidis Georgeen
ΔημιουργόςBucher Matthiasen
ΔημιουργόςBucher Matthiasel
ΕκδότηςInstitute of Electrical and Electronics Engineersen
ΠεριγραφήWe acknowledge support of this work by the project “National Infrastructure in Nanotechnology, Advanced Materials and Micro-/Nanoelectronics (INNOVATION-EL)” (MIS 5002772) which is implemented under the Action “Reinforcement of the Research and Innovation Infrastructure” of the Operational Programme Competitiveness, Entrepreneurship and Innovation” (NSRF 2014-2020), co-financed by Greece and the European Union (European Regional Development Fund). This research has been co-financed by the European Regional Development Fund of the European Union and Greek national funds through the Operational Program Competitiveness, Entrepreneurship and Innovation, under the call RESEARCH – CREATE – INNOVATE (project code: T2EDK-00340).en
ΠερίληψηThe increased usage of high electron mobility transistors (HEMTs), especially using GaN, for a large range of applications demands for efficient circuit design models. The paper discusses the procedures for determining key parameters of a physics-based HEMT model for circuit design. HEMTs using AlGaN/GaN epitaxy on Si substrate fabricated at IESL-FORTH are used. Basic parameters such as barrier capacitance, threshold voltage, slope factor, and mobility are determined from experimental characteristics over a large range of temperature. It is shown that the behavior of HEMTs, in terms of transconductance efficiency, is in many ways similar to that of MOSFETs.en
ΤύποςΣύντομη Δημοσίευση σε Συνέδριοel
ΤύποςConference Short Paperen
Άδεια Χρήσηςhttp://creativecommons.org/licenses/by/4.0/en
Ημερομηνία2024-08-02-
Ημερομηνία Δημοσίευσης2022-
Θεματική ΚατηγορίαHigh electron mobility transistoren
Θεματική ΚατηγορίαHEMTen
Θεματική ΚατηγορίαThreshold voltageen
Θεματική ΚατηγορίαMobilityen
Θεματική ΚατηγορίαTransconductanceen
Βιβλιογραφική ΑναφοράL. Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, G. Konstantinidis, and M. Bucher, "A contribution to GaN HEMT modeling and parameter extraction including temperature dependence," in Proceedings of the 2022 IEEE Latin American Electron Devices Conference (LAEDC 2022), Cancun, Mexico, 2022, doi: 10.1109/LAEDC54796.2022.9908184.en

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